copyright@ semipower electronic technology co., ltd. all rights reserved. features high ruggedness r ds( on ) (max 0.023 ? )@v gs =10v gate charge ( typ 36 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin. this technology enable power mosfet to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. it is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. n - channel mosfet absolute maximum ratings symbol parameter value unit to - 220 to - 220f v dss drain to source voltage 60 v i d continuous drain current (@t c =25 o c) 50 50* a continuous drain current (@t c =100 o c) 36 36* a i dm drain current pulsed (note 1) 200 a v gs gate to source voltage 20 v e as single pulsed avalanche energy (note 2) 412 mj e ar repetitive avalanche energy (note 1) 13 mj dv/dt peak diode recovery dv/dt (note 3) 7 v/ns p d total power dissipation (@t c =25 o c) 110 42 w derating factor above 25 o c 0.9 0.34 w/ o c t stg , t j operating junction temperature & storage temperature - 55 ~ + 150 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. 300 o c thermal characteristics symbol parameter value unit to - 220 to - 220f r thjc thermal resistance, junction to case 1.14 2.97 o c/w r thcs thermal resistance, case to sink 0.5 o c/w r thja thermal resistance, junction to ambient 62.5 o c /w mar. 2011. rev. 2.0 1/7 *. drain current is limited by junction temperature. bv dss : 60v i d : 50a r ds(on) : 0.023ohm 1 2 3 1. gate 2. drain 3. source 1 2 3 to - 220f 1 2 3 to - 220 sw50n06a samwin item sales type marking package packaging 1 sw p 50n06a sw50n06a to - 220 tube 2 sw f 50n06a sw50n06a to - 220f tube order codes
copyright@ semipower electronic technology co., ltd. all rights reserved. electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit off characteristics bv dss drain to source breakdown voltage v gs =0v, i d =250ua 60 - - v bv dss / t j breakdown voltage temperature coefficient i d =250ua, referenced to 25 o c - 0.06 - v/ o c i dss drain to source leakage current v ds =60v, v gs =0v - - 1 ua v ds =48v, t c =125 o c - - 100 ua i gss gate to source leakage current, forward v gs =20v, v ds =0v - - 100 na v gs = - 20v, v ds =0v - - - 100 na gate to source leakage current, reverse on characteristics v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2.0 - 4.0 v r ds(on) drain to source on state resistance v gs =10v, i d = 25a 0.016 0.023 ? dynamic characteristics c iss input capacitance v gs =0v, v ds =25v, f=1mhz 900 1220 pf c oss output capacitance 430 550 c rss reverse transfer capacitance 80 90 t d(on) turn on delay time v ds =30v, i d =25a, r g =25? 50 ns tr rising time 165 t d(off) turn off delay time 78 t f fall time 60 q g total gate charge v ds =48v, v gs =10v, i d =50a 36 45 nc q gs gate - source charge 8.6 - q gd gate - drain charge 12 - source to drain diode ratings characteristics symbol parameter test conditions min. typ. max. unit i s continuous source current integral reverse p - n junction diode in the mosfet - - 50 a i sm pulsed source current - - 200 a v sd diode forward voltage drop. i s =50a, v gs =0v - - 1.5 v t rr reverse recovery time i s =50a, v gs =0v, di f /dt=100a/us - 95 - ns q rr breakdown voltage temperature - 250 - uc . notes 1. repeatitive rating : pulse width limited by junction temperature. 2. l = 300uh, i as = 50.0a, v dd = 50v, r g =25?, starting t j = 25 o c 3. i sd 50.0a, di/dt = 200a/us, v dd bv dss , staring t j =25 o c 4. pulse test : pulse width 300us, duty cycle 2% 5. essentially independent of operating temperature. sw50n06a samwin 2/7
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 1. on - state characteristics fig. 2. transfer characteristics fig. 3. on - resistance variation vs. drain current and gate voltage fig. 5. capacitance characteristics (non - repetitive) fig. 6. gate charge characteristics fig. 4. on state current vs. diode forward voltage 3/7 sw50n06a samwin 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 ? ? n o t e 1 . 2 5 0 ? p u l s e t e s t 2. t c = 2 5 ? ? v gs [ v ] top 15 10 8 7 6 5.5 5 bottom 4.5 i d [ a ], drain current v ds [v], drain to source voltage 2 4 6 8 10 10 0 10 1 10 2 ? ? n o t e v ds = 30 [ v ] 2 5 0 ? p u l s e t e s t 2 5 [ ? ? ] 1 2 5 [ ? ? ] - 5 5 [ ? ? ] id[ a ], drain current vgs[ v ], gate-source voltage 0 50 100 150 200 0 10 20 30 40 50 60 70 ? ? n o t e t j = 2 5 ? ? v gs =20[v] v gs =10[v] r ds(on) [ m ? ] drain to source on resistance i d [ a ], drain current 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 0 10 1 10 2 tj=25 o c tj=175 o c ? ? n o t e v gs = 0v 2 5 0 ? p u l s e t e s t i dr [ a ], reverse drain current vsd[ v ], source-drain voltage 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 1. c iss = c gs + c gd (c ds = shorted) 2. c oss = c ds + c gd 3. c rss = c gd ? ? n o t e 1. v gs = 0[v] 2. frequency = 1[mhz] c oss c rss c iss capcitance [ pf ] v ds [ v ], drain to source voltage 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 ? ? n o t e i d = 50a v ds = 48v v ds = 30v v ds =12v v gs [ v ], gate to source voltage[v] gate charge [nc]
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 9. maximum drain current vs. case temperature. fig. 8. on resistance variation vs. junction temperature fig. 10. maximum safe operating area fig. 11. transient thermal response curve fig 7. breakdown voltage variation vs. junction temperature sw50n06a samwin 4/7 -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ? ? n o t e 1. v gs = 0v 2. i d = 2 5 0 ? bv dss [ v ], breakdown voltage t e m p e r a t u r e [ ? ? ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ? ? n o t e 1. vgs = 10v 2. id = 25a rds(on),(normalized) drain-source on-resistance tj, junction temperature[ o c] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 c a s e t e m p . @ 1 7 5 ? ? j u n c t i o n t e m p . @ 2 5 ? ? single pulse ? ? s e e f i g u r e 1 1 . operating area limited by r ds(on) 100us 1ms 10ms dc i d [ a ], drain current v ds [ v ], drain to source voltage 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 t 1 t 2 p dm 1. z ? j c ( t ) = 1 . 2 5 ? ? / w m a x . 2. duty factor, d=t 1 /t 2 3. z ? j c (t) = (t jm - t c )/p d z ? j c (t), thermal impedance t 1 [ sec ], square wave pulse duration
copyright@ semipower electronic technology co., ltd. all rights reserved. v ds same type as dut dut v gs 1ma q g q gs q gd v gs charge v dd dut v ds r l r g 10v in 10% v ds v in 90% 10% t d(on) t r t on t d(off) t off t f v dd dut v ds l r g 10v in i as t p time i d(t) bv dss i as v ds(t) eas = l x i as 2 x bv dss - v dd bv dss 2 1 fig. 12. gate charge test circuit & waveform fig. 13. switching time test circuit & waveform fig. 14. unclamped inductive switching test circuit & waveform 5/7 sw50n06a samwin
copyright@ semipower electronic technology co., ltd. all rights reserved. fig. 15. peak diode recovery dv/dt test circuit & waveform v dd same type as dut v ds l r g 10v gs i s + - v ds dut *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i s (dut) v ds (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd sw50n06a samwin 6/7
copyright@ semipower electronic technology co., ltd. all rights reserved. sw50n06a samwin revision history revision no. changed characteristics responsible date issuer rev 1.0 origination, first release alice nie 2007.12.05 xzq rev 2.0 updated the format of datasheet and added order codes. alice nie 2011.03.24 xzq ????? ? ? 25 ? mf6 029 - 88253717 029 - 88251977 ????? ??? a 2005 0755 - 83981818 0755 - 83476838 www.semipower.com.cn 7/7
|
